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Freescale Semiconductor Technical Data
Document Number: MMG3003NT1 Rev. 7, 3/2008
Heterojunction Bipolar Transistor Technology (InGaP HBT)
NOT RECOMMENDED FOR NEW DESIGN
The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 40 - 3600 MHz * P1dB: 24 dBm @ 900 MHz * Small - Signal Gain: 20 dB @ 900 MHz * Third Order Output Intercept Point: 40.5 dBm @ 900 MHz * Single Voltage Supply * Internally Matched to 50 Ohms * Low Cost SOT - 89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
40 - 3600 MHz, 20 dB 24 dBm InGaP HBT
12
3
CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC
Table 1. Typical Performance (1)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 20 - 15 - 9.3 24 40.5 2140 MHz 16.9 - 14.1 -14.5 23.3 40 3500 MHz 12 - 11.2 - 10.2 20.5 37 Unit dB dB dB dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VCC ICC Pin Tstg TJ Value 7 400 15 - 65 to +150 150 Unit V mA dBm C C
2. For reliable operation, the junction temperature should not exceed 150C.
1. VCC = 6.2 Vdc, TC = 25C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 6.2 Vdc, ICC = 180 mA, TC = 25C)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 31.6 Unit C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2004-2008. All rights reserved.
MMG3003NT1 1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Broadband High Linearity Amplifier
MMG3003NT1
Table 4. Electrical Characteristics (VCC = 6.2 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 19.3 -- -- -- -- -- 160 -- Typ 20 - 15 - 9.3 24 40.5 4 180 6.2 Max -- -- -- -- -- -- 205 -- Unit dB dB dB
NOT RECOMMENDED FOR NEW DESIGN
Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1)
dBm dB mA V
1. For reliable operation, the junction temperature should not exceed 150C.
MMG3003NT1 2 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Power Output @ 1dB Compression
dBm
Table 5. Functional Pin Description
Pin Number 1 RFin RFout/DC Supply 2 3 Pin Function 2
NOT RECOMMENDED FOR NEW DESIGN
1
2
3
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Conditions/Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
MMG3003NT1 RF Device Data Freescale Semiconductor 3
NOT RECOMMENDED FOR NEW DESIGN
Ground
50 OHM TYPICAL CHARACTERISTICS
25 TC = 85C Gp, SMALL-SIGNAL GAIN (dB) 25C 20 -40C S11, S22(dB) -10 S22 0
NOT RECOMMENDED FOR NEW DESIGN
15
-20 S11 VCC = 6.2 Vdc VCC = 6.2 Vdc ICC = 180 mA 2 f, FREQUENCY (GHz) 3 4
10 0 1 2 f, FREQUENCY (GHz) 3 4
-30 0 1
Figure 2. Small - Signal Gain (S21) versus Frequency
Figure 3. Input/Output Return Loss versus Frequency
23 P1dB, 1 dB COMPRESSION POINT (dBm) 21 Gp, SMALL-SIGNAL GAIN (dB) 19 17 15 13 11 9 5 10 15 Pout, OUTPUT POWER (dBm) 20 3500 MHz, C5 = 0.5 pF VCC = 6.2 Vdc ICC = 180 mA 25 1960 MHz, C5, C6 = 1.3 pF 2140 MHz, C5, C6 = 1.3 pF 2600 MHz, C5 = 1.2 pF 900 MHz, C5 = 2.7 pF
25 24 23 22 21 20 19 18 17 0.5 1 1.5 2 2.5 f, FREQUENCY (GHz) VCC =6.2 Vdc ICC = 180 mA 3 3.5
Figure 4. Small - Signal Gain versus Output Power
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 200 ICC, COLLECTOR CURRENT (mA) 45
Figure 5. P1dB versus Frequency
42
150
39
100
36 VCC = 6.2 Vdc ICC = 180 mA 100 kHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4
50
33
0 4 4.5 5 5.5 6 6.5 VCC, COLLECTOR VOLTAGE (V)
30
Figure 6. Collector Current versus Collector Voltage
Figure 7. Third Order Output Intercept Point versus Frequency
MMG3003NT1 4 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 45 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 42
42
NOT RECOMMENDED FOR NEW DESIGN
39
41
36
40 VCC = 6.2 Vdc f = 900 MHz 100 kHz Tone Spacing 8 Vdc Supply with 10 W Dropping Resistor -20 0 20 40 60 80 100
33 f = 900 MHz 100 kHz Tone Spacing 30 5.8 6 6.2 6.4 6.6 VCC, COLLECTOR VOLTAGE (V)
39 -40
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point versus Collector Voltage
Figure 9. Third Order Output Intercept Point versus Case Temperature
-30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
105
-40 MTTF (YEARS)
-50
104
-60 VCC = 6.2 Vdc ICC = 180 mA f = 900 MHz 100 kHz Tone Spacing
-70
-80 9
103 12 15 18 21 24 120 125 130 135 140 145 150 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 6.2 Vdc, ICC = 180 mA
Figure 10. Third Order Intermodulation versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 11. MTTF versus Junction Temperature
-20 VCC = 6.2 Vdc, ICC = 180 mA, f = 2140 MHz, C5 = 1.3 pF Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
8
-30
NF, NOISE FIGURE (dB)
6
-40
4
-50
2 VCC = 6.2 Vdc ICC = 180 mA 0 0 0.5 1 1.5 2 2.5 3 3.5 4 f, FREQUENCY (GHz)
-60
-70 9 11 13 15 17 19 Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3003NT1
RF Device Data Freescale Semiconductor
5
NOT RECOMMENDED FOR NEW DESIGN
50 OHM APPLICATION CIRCUIT: 40- 800 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2
Z5 C5
Z6
RF OUTPUT
VCC Z5 Z6 PCB
Z1 Z2 Z3 Z4
0.347 0.575 0.172 0.403
x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip
0.286 x 0.058 Microstrip 0.061 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30 S21 20 10 0 S22 -10 -20 -30 0 200 S11 400 f, FREQUENCY (MHz) C1 L1 C2 C5 VCC = 6.2 Vdc ICC = 180 mA 600 800 R1 C4 C3
MMG30XX Rev 2
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2, C4 C3 C5 (1) L1 R1 Description 0.01 F Chip Capacitors 68 pF Chip Capacitor 2.7 pF Chip Capacitor 470 nH Chip Inductor 7.5 W Chip Resistor Part Number C0603C103J5RAC C0805C680J5RAC 12105J2R7BS BK2125HM471 - T RK73B2ATTE7R5J Manufacturer Kemet Kemet AVX Taiyo Yuden KOA Speer
1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies.
Table 9. Supply Voltage versus R1 Values
Supply Voltage R1 Value 7 4.4 8 10 9 15.6 10 21 11 27 12 32 V
Note: To provide VCC = 6.2 Vdc and ICC = 180 mA at the device.
MMG3003NT1 6 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM APPLICATION CIRCUIT: 800 - 1100 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C5
Z5 C2
Z6
RF OUTPUT
VCC Z4 Z5 PCB
Z1, Z6 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.333 x 0.058 Microstrip 0.07 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30 S21 20 10 0 S22 -10 -20 S11 -30 -40 600 VCC = 6.2 Vdc ICC = 180 mA 700 800 900 1000 1100 1200 MMG30XX Rev 2 C1 C5 L1 C2 R1 C4 C3
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 10. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 C5 (1) L1 R1 Description 47 pF Chip Capacitors 68 pF Chip Capacitor 0.01 F Chip Capacitor 2.7 pF Chip Capacitor 22 nH Chip Inductor 7.5 W Chip Resistor Part Number C0805C470J5RAC C0805C680J5RAC C0603C103J5RAC 06035J2R7BS HK160822NJ - T RK73B2ATTE7R5J Manufacturer Kemet Kemet Kemet AVX Taiyo Yuden KOA Speer
1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies.
MMG3003NT1 RF Device Data Freescale Semiconductor 7
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM APPLICATION CIRCUIT: 1800- 2400 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1 Z1, Z7 Z2 Z3 Z4
Z2
Z3
Z4 C5
Z5 C6
Z6 C2
RF OUTPUT Z7
VCC 0.347 0.575 0.172 0.047 x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip Z5 Z6 PCB
0.062 x 0.058 Microstrip 0.466 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 20. 50 Ohm Test Circuit Schematic
30 20 10 0 -10 -20 -30 -40 1600 1800 2000 2200 2400 2600 f, FREQUENCY (MHz) S11 C1 C5 C6 S22 VCC = 6.2 Vdc ICC = 180 mA MMG30XX Rev 2 L1 C2 S21 R1 C4 C3
Figure 21. S21, S11 and S22 versus Frequency
Figure 22. 50 Ohm Test Circuit Component Layout
Table 11. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 C5 (1) C6 L1 R1
(1)
Description 47 pF Chip Capacitors 68 pF Chip Capacitor 0.01 F Chip Capacitor 1.2 pF Chip Capacitor 0.1 pF Chip Capacitor 22 nH Chip Inductor 7.5 W Chip Resistor
Part Number C0805C470J5RAC C0805C680J5RAC C0603C103J5RAC 06035J1R2BS 06035J0R1BS HK160822NJ - T RK73B2ATTE7R5J
Manufacturer Kemet Kemet Kemet AVX AVX Taiyo Yuden KOA Speer
1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies.
MMG3003NT1 8 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM APPLICATION CIRCUIT: 2500 - 2700 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3 C5
Z4
Z5 C2
Z6
RF OUTPUT
VCC
Z1, Z6 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.086 x 0.058 Microstrip
Z4 Z5 PCB
0.085 x 0.058 Microstrip 0.404 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 23. 50 Ohm Test Circuit Schematic
30 20 10 0 S22 -10 -20 S11 -30 -40 2200 VCC = 6.2 Vdc ICC = 180 mA 2300 2400 2500 2600 2700 2800 MMG30XX Rev 2 C1 C5 C2 L1 S21 R1 C4 C3
f, FREQUENCY (MHz)
Figure 24. S21, S11 and S22 versus Frequency
Figure 25. 50 Ohm Test Circuit Component Layout
Table 12. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 C5 (1) L1 R1 Description 2.2 pF Chip Capacitors 68 pF Chip Capacitor 0.01 F Chip Capacitor 1.2 pF Chip Capacitor 39 nH Chip Inductor 7.5 W Chip Resistor Part Number 06035J2R2BS C0805C680J5RAC C0603C103J5RAC 06035J1R2BS HK160839NJ - T RK73B2ATTE7R5J Manufacturer AVX Kemet Kemet AVX Taiyo Yuden KOA Speer
1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies.
MMG3003NT1 RF Device Data Freescale Semiconductor 9
NOT RECOMMENDED FOR NEW DESIGN
S21, S11, S22 (dB)
50 OHM APPLICATION CIRCUIT: 3400 - 3600 MHz
VSUPPLY
R1
NOT RECOMMENDED FOR NEW DESIGN
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3 C5
Z4
Z5 C2
Z6
RF OUTPUT
VCC
Z1, Z6 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.086 x 0.058 Microstrip
Z4 Z5 PCB
0.085 x 0.058 Microstrip 0.404 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 26. 50 OhmTest Circuit Schematic
20 15 S21, S11, S22 (dB) 10 5 0 C1 -5 -10 S11 -15 -20 3200 3300 3400 3500 3600 VCC = 6.2 Vdc ICC = 180 mA 3700 3800 MMG30XX Rev 2 S22 C5 L1 C2 S21 R1 C4 C3
f, FREQUENCY (MHz)
Figure 27. S21, S11 and S22 versus Frequency
Figure 28. 50 Ohm Test Circuit Component Layout
Table 13. 50 OhmTest Circuit Component Designations and Values
Part C1, C2 C3 C4 C5 (1) L1 R1 Description 2.2 pF Chip Capacitors 68 pF Chip Capacitor 0.01 F Chip Capacitor 0.5 pF Chip Capacitor 39 nH Chip Inductor 7.5 W Chip Resistor Part Number 06035J2R2BS C0805C680J5RAC C0603C103J5RAC 06035J0R5BS HK160839NJ - T RK73B2ATTE7R5J Manufacturer AVX Kemet Kemet AVX Taiyo Yuden KOA Speer
1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies.
MMG3003NT1 10 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
50 OHM TYPICAL CHARACTERISTICS
Table 14. Common Emitter S - Parameters (VCC = 6.2 Vdc, ICC = 180 mA, TC = 25C, 50 Ohm System)
f MHz 0100 S11 |S11| 0.141 0.153 0.155 0.152 0.147 0.139 0.135 0.129 0.123 0.117 0.112 0.106 0.101 0.096 0.090 0.086 0.081 0.076 0.073 0.069 0.065 0.062 0.059 0.056 0.054 0.051 0.048 0.046 0.033 0.030 0.027 0.024 0.023 0.021 0.021 0.022 0.023 0.025 0.027 0.029 0.031 0.033 0.036 0.039 178.297 175.556 160.177 159.068 156.309 153.853 150.838 148.378 145.160 142.332 139.364 136.769 133.592 131.187 128.979 126.711 124.541 122.189 121.191 119.451 118.827 118.851 118.882 119.703 120.919 123.223 125.019 128.063 135.869 139.127 142.585 146.640 152.580 158.266 166.196 171.633 177.431 - 176.142 - 173.137 - 170.367 - 168.467 - 168.388 - 169.515 - 170.197 |S21| 12.985 12.654 13.067 12.851 12.685 12.519 12.327 12.124 11.915 11.694 11.470 11.238 11.004 10.770 10.532 10.298 10.066 9.841 9.611 9.393 9.170 8.957 8.742 8.541 8.340 8.143 7.957 7.774 7.640 7.475 7.322 7.170 7.040 6.890 6.756 6.621 6.495 6.371 6.251 6.135 6.025 5.921 5.815 5.716 S21 173.850 0 168.9 164.046 160.334 156.518 152.664 149.087 145.521 142.009 138.634 135.366 132.093 128.948 125.882 122.88 119.942 117.117 114.276 111.625 108.992 106.412 103.879 101.417 99.039 96.664 94.364 92.107 89.892 87.599 85.482 83.442 81.444 79.397 77.439 75.477 73.576 71.695 69.952 67.988 66.175 64.385 62.595 60.823 59.079 |S12| 0.057 0.057 0.059 0.058 0.058 0.058 0.057 0.057 0.057 0.057 0.057 0.057 0.057 0.057 0.056 0.056 0.056 0.056 0.056 0.056 0.056 0.056 0.056 0.056 0.056 0.056 0.056 0.056 0.057 0.057 0.057 0.057 0.058 0.058 0.058 0.058 0.058 0.059 0.059 0.059 0.060 0.060 0.060 0.061 S12 0.785 0 - 0.913 - 2.423 - 2.897 - 3.227 - 3.971 - 4.471 - 4.799 - 5.285 - 5.623 - 6.012 - 6.295 - 6.705 - 7.044 - 7.277 - 7.495 - 7.847 - 8.05 - 8.311 - 8.582 - 8.89 - 9.079 - 9.405 - 9.615 - 9.805 - 10.198 - 10.536 - 10.724 - 11.197 - 11.434 - 11.649 - 11.993 - 12.335 - 12.616 - 12.879 - 13.16 - 13.445 - 13.806 - 14.176 - 14.413 - 14.882 - 15.338 - 15.659 - 16.136 |S22| 0.087 0.136 0.125 0.159 0.187 0.212 0.239 0.263 0.285 0.306 0.326 0.345 0.362 0.378 0.394 0.408 0.422 0.435 0.447 0.458 0.470 0.480 0.490 0.498 0.507 0.515 0.522 0.530 0.529 0.536 0.541 0.546 0.552 0.555 0.560 0.563 0.566 0.570 0.573 0.577 0.580 0.583 0.586 0.589 S22 - 167.704 - 131.397 - 130.233 - 128.649 - 128.651 - 129.263 - 130.237 - 131.637 - 133.294 - 135.284 - 137.146 - 139.07 - 141.171 - 143.273 - 145.372 - 147.618 - 149.849 - 151.947 - 154.142 - 156.289 - 158.481 - 160.544 - 162.608 - 164.561 - 166.501 - 168.351 - 170.229 - 172.918 - 174.487 - 175.93 - 177.394 - 179.018 179.899 178.582 177.318 176.139 175.08 173.812 172.704 171.566 170.426 169.283 168.164 (continued)
NOT RECOMMENDED FOR NEW DESIGN
0200 0250 0300 0350 0400 0450 0500 0550 0600 0650 0700 0750 0800 0850 0900 0950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250
MMG3003NT1 RF Device Data Freescale Semiconductor 11
NOT RECOMMENDED FOR NEW DESIGN
0150
- 137.479
50 OHM TYPICAL CHARACTERISTICS
Table 14. Common Emitter S - Parameters (VCC = 6.2 Vdc, ICC = 180 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 2300 S11 |S11| 0.042 0.045 0.048 0.052 0.056 0.060 0.063 0.067 0.071 0.074 0.079 0.083 0.087 0.091 0.095 0.099 0.103 0.107 0.110 0.114 0.117 0.119 0.122 0.126 0.12826 0.13168 0.13497 - 171.944 - 173.747 - 175.268 - 177.409 - 178.703 179.650 177.705 175.894 174.932 172.453 170.595 168.962 167.373 165.543 164.513 163.309 162.077 161.249 160.222 159.057 158.018 156.94 155.757 154.754 153.898 152.875 152.157 |S21| 5.618 5.525 5.431 5.345 5.258 5.173 5.096 5.015 4.938 4.861 4.788 4.715 4.643 4.573 4.506 4.438 4.373 4.308 4.244 4.182 4.121 4.061 4.004 3.949 3.895 3.84045 3.78882 S21 57.331 55.573 53.848 52.136 50.405 48.736 47.012 45.266 43.452 41.831 40.113 38.402 36.711 35.036 33.356 31.684 29.98 28.307 26.653 25.007 23.381 21.791 20.196 18.618 17.049 15.491 13.97 |S12| 0.061 0.061 0.062 0.062 0.062 0.063 0.063 0.063 0.064 0.064 0.065 0.065 0.065 0.066 0.066 0.066 0.067 0.067 0.067 0.068 0.068 0.068 0.069 0.069 0.06938 0.06971 0.07016 S12 - 16.513 - 16.98 - 17.435 - 17.955 - 18.404 - 19.004 - 19.505 - 20.1 - 20.75 - 21.297 - 21.999 - 22.577 - 23.239 - 23.942 - 24.652 - 25.269 - 26.085 - 26.717 - 27.483 - 28.223 - 29.013 - 29.779 - 30.535 - 31.29 - 31.957 - 32.814 - 33.474 |S22| 0.591 0.593 0.595 0.597 0.598 0.600 0.602 0.603 0.605 0.607 0.609 0.610 0.612 0.614 0.616 0.618 0.620 0.622 0.624 0.626 0.629 0.631 0.633 0.635 0.6367 0.6392 0.64031 S22 167.003 164.669 163.447 162.182 160.854 159.516 158.1 156.649 155.174 153.675 152.104 150.539 148.941 147.251 145.747 144.105 142.483 140.894 139.31 137.737 136.267 134.76 6 131.951 130.655 129.412
NOT RECOMMENDED FOR NEW DESIGN
2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600
MMG3003NT1 12 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
2350
165.803
1.7 7.62 0.305 diameter
NOT RECOMMENDED FOR NEW DESIGN
5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.54
Recommended Solder Stencil
NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH.
Figure 29. Recommended Mounting Configuration
MMG3003NT1 RF Device Data Freescale Semiconductor 13
NOT RECOMMENDED FOR NEW DESIGN
3.48
2.49
PACKAGE DIMENSIONS
NOT RECOMMENDED FOR NEW DESIGN
MMG3003NT1 14 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
RF Device Data Freescale Semiconductor
MMG3003NT1
15
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
16
MMG3003NT1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing
NOT RECOMMENDED FOR NEW DESIGN
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 5 6 7 Date Mar. 2007 July 2007 Mar. 2008 * * Description Corrected and updated Part Numbers in Tables 8, 10, 11, 12, and 13, Component Designations and Values, to RoHS compliant part numbers, p. 6 - 10 Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 14 - 16. Case updated to add missing dimension for Pin 1 and Pin 3.
* Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 * Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5
* Corrected S - Parameter table frequency column label to read "MHz" versus "GHz" and corrected frequency values from GHz to MHz, p. 11, 12
MMG3003NT1 RF Device Data Freescale Semiconductor 17
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
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MMG3003NT1
Rev. 18 7, 3/2008 Document Number: MMG3003NT1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN

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